
MCC 95
MCD 95
3000
10 5
V R = 0 V
250
I t
[A s]
2500
2000
I TSM
1500
[A]
1000
500
50 Hz
80% V RRM
T VJ = 45°C
T VJ = 125°C
2
2
T VJ = 45°C
T VJ = 125°C
200
I TAVM
150
[A]
100
50
DC
180° sin
120°
60°
30°
t [ms]
0
0.001 0.01 0.1 1
t [s]
Fig. 3 Surge overload current I TSM ,
I FSM : Crest value, t: duration
10 4
1
Fig. 4 I 2 t versus time (1-10 ms)
10
0
0 25 50 75 100 125 150
T C [°C]
Fig. 4a Maximum forward current
at case temperature
250
R thKA K/W
0.4
200
0.6
0.8
P tot
150
[W]
100
50
DC
180° sin
120°
60°
30°
1
1.2
1.5
2
3
Fig. 5 Power dissipation versus
on-state current & ambient
temperature
0
0
50
100
150
0
50
100
150
(per thyristor or diode)
I TAVM , I FAVM [A]
T a [°C]
1000
R thKA K/W
800
P tot
600
[W]
0.03
0.06
0.08
0.12
0.15
0.3
0.5
400
Circuit
B6
200
3x MCC95 or
3x MCD95
Fig. 6 Three phase rectifier bridge:
Power dissipation vs. direct
output current and ambient
0
0
100
200
300
0
50
100
150
temperature
I dAVM [A]
T a [°C]
IXYS reserves the right to change limits, test conditions and dimensions.
? 2010 IXYS All rights reserved
20101116a
4-5